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| MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904T) Ultra-Small Surface Mount Package SOT-523 Dim A C Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4 A B B C Mechanical Data Case: SOT-523, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 3N Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) B E TOP VIEW C D G H J K L E D G H K J M L M N a All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT3906T -40 -40 -5.0 -200 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30271 Rev. 2 - 2 1 of 3 MMBT3906T Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 3/4 3/4 60 80 100 60 30 3/4 -0.65 3/4 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 3/4 300 3/4 3/4 -0.25 -0.40 -0.85 -0.95 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Noise Figure SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) NF V V dB IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCE = -5.0Vdc, IC = 100mAdc, RS = 1.0KW, f = 1.0KHz VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT 3/4 3/4 2.0 0.1 100 3.0 250 4.5 10 12 10 400 60 3/4 pF pF kW x 10-4 3/4 mS MHz VCE = 1.0V, IC = 10mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz td tr ts tf (Note 3) 3/4 3/4 3/4 3/4 35 35 225 75 ns ns ns ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Ordering Information Device MMBT3906T-7 Note: Packaging SOT-523 Shipping 3000/Tape & Reel 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3NYM 3N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4 May 5 2001 M Jun 6 Jul 7 2002 N Aug 8 Sep 9 2003 P Oct O Nov N 2004 R Dec D DS30271 Rev. 2 - 2 2 of 3 MMBT3906T 250 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) (see Note 1) 100 f = 1MHz Pd, POWER DISSIPATION (mW) 200 150 10 100 Cibo 50 Cobo 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 200 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 1 100 TA = -25C TA = +25C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100 DS30271 Rev. 2 - 2 3 of 3 MMBT3906T |
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